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MBE Innovator Award

The purpose of the award is to recognize individuals whose innovative work has significantly advanced the field of molecular beam epitaxy. It includes a $3,000 cash prize and an engraved plaque. This award is sponsored by Veeco Instruments and, starting in 2003, will be presented at each annual NAMBE conference - for additional information please go to

Nominees for the MBE Innovator Award can come from university, government or commercial facilities using MBE technology from anywhere in the world. Individuals must have outstanding credentials, and their innovative work must have had/or be having a significant impact on the advancement of MBE technology in one (or more) of the following four categories:

Submissions of qualified candidates for consideration for the award should be made using the MBE Innovator Nomination Form (PDF). The submission deadline for NAMBE-2005 is August 1st 2005.

The 2004 MBE Innovator Award

The NAMBE Advisory Board has selected Professor Arthur Gossard as the winner of the second annual MBE Innovator Award. The award citation reads:


Read the full announcement.

The 2003 MBE Innovator Award

The NAMBE Advisory Board selected Dr. David L. Miller as the winner of the first annual MBE Innovator Award. The award citation reads:


Dr. Miller received an AB in Physics from Whitman College in 1966 and a Masters and PhD in Physics from University of Illinois in 1967 and 1973, respectively. He was a Member of Technical Staff and Group Leader at the Rockwell Science Center from 1977-1988. From 1988-2000, Dr. Miller was Professor of Electrical Engineering at The Pennsylvania State University. He is currently a consultant in the field of MBE, as well as an Adjunct Professor at Penn State. Dr. Miller has served the MBE community in numerous ways, including serving as Chairman of NAMBE 1998, as co-Chairman of the Program Committee for the Twelfth International Conference on Molecular Beam Epitaxy, and as a member of the NAMBE Advisory Board.

Most Recent Sci Postings

 Mukul Debnath Writes:
InSb-based epilayers and quantum wells with high electron mobilities on off-axis Ge(211) and Ge-On-Insulator(001) substrates
InSb growth on Ge and Ge-On-Insulator substrates by more

 Yuxin Song Writes:
Molecular Beam Epitaxy Growth of GaSbxBi1-x
Molecular Beam Epitaxy Growth of more

 Joshua Zide Writes:
Enhancing Efficiency in Thermoelectrics with MBE-grown Tb(Er)As/InGaAs Nanocomposites
We present the growth and characterization results of InGaAs epitaxially-embedded with rare eartharsenide nanoparticles. The addition of semi-metallic terbium- and erbium-based nanoparticles to this III-V semiconductor aims to surpass current material more

 Zetian Mi Writes:
Rolled-up InAs Quantum Dot Tube Lasers
Rolled-up quantum dot micro- and nano-scale tubes have emerged as a new class of building blocks for nanophotonics.1-4 They are formed when coherently strained semiconductor bilayers, with the incorporation of self-organized quantum dot heterostructures more

 Jeremy Law Writes:
Selective Area Regrowth of Self-Aligned, Low-Resistance Ohmic Contacts on InGaAs
With each technology node, transistor device active areas decrease by approximately 1:4; to increase device performance by maintaining absolute resistance, contact resistivities must decrease by 1:4. The high dopant concentrations achievable by MBE more

 John Watson Writes:
Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in C-Doped (001) GaAs/AlGaAs Quantum Wells
We report on the growth and electrical characterization of a series of twodimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The growths were conducted in a dedicated more

 Kyusang Lee Writes:
Multiple growths of GaAs solar cells from a single wafer
GaAs-based epitaxial lift-off (ELO) solar cells exhibit superior power conversion efficiency compared to all other single-junction photovoltaic materials systems, such as crystalline Si, CIGS, CdTe, and even substrate-based GaAs cells.[1,2] Additionally, more

 Keun-Yong Ban Writes:
Investigation of intersubband transitions of InAs/GaAsSb quantum dots
InAs quantum dots (QDs) have attracted great attention as a candidate of intermediate band solar cells (IBSCs). In order to realize IBSCs with the InAs QDs, it is required to simultaneously achieve high density and uniformity of QDs for the high light more

 Raquel Gargallo Caballero Writes:
Strain-induced composition limitation in N δ-doped InGaAs quantum wells grown by molecular beam epitaxy
In the last years, dilute nitrides based on (Ga,In)(N,As) have been extensively investigated due to their potential application in GaAs-based long-wavelength optoelectronic devices [1] and solar cells [2]. However, due to the structural deterioration of more

 Dongsheng Fan Writes:
Photoluminescence and Surface Morphology Characterization of GaAsBi Grown on GaAs by Molecular Beam Epitaxy
Recently, dilute bismide compounds, such as GaAs1-xBix alloys, have received extensive attention. It has been reported that the incorporation of Bi can reduce the bandgap of GaAs significantly, by 60-90 meV per percent Bi [1-4]. Furthermore, dilute more

 Rytis Dargis Writes:
Rare-earth-metal oxide bilayer buffer for epitaxial growth of single crystal Ge on Si (111)
In this work, we demonstrate epitaxial growth of single crystalline germanium on silicon (111) substrate via bilayer rare-earth-metal oxide buffer which accommodates the crystal lattice mismatch of 4.2 % between germanium and silicon. Cubic bixbyite more

 Bill Hoke Writes:
Monolithic Integration of Silicon CMOS and GaN Transistors in a Current Mirror Circuit
The monolithic integration of high density, inexpensive silicon circuitry with III-V technology has been a long sought objective. Recently the successful integration of silicon CMOS with metamorphic InP HBTs has been reported.1 Here we present one the more

 Hieu Pham Trung Nguyen Writes:
High Efficiency Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes on Silicon
Light emitting diodes (LEDs), with the use of InGaN/GaN nanowire heterostructures, have been intensively investigated. Compared to their planar counterparts, nanowires can exhibit drastically reduced dislocation densities and polarization fields, more

 Angie Lin Writes:
Effect of nucleation and growth conditions on antiphase domains in GaP on Si
Epitaxial growth of GaP on Si is interesting for two main purposes: III-V photonics integration on Si where GaP serves as a structural layer between the Si substrate and other device layers and in nonlinear optics (NLO) where GaP serves as the active more

 Abstract Post Writes:
InAs MOS devices with MBE-grown Gd2O3 passivation
InGaAs with high κ dielectrics is now viable for complementary metal-oxide-semiconductor (CMOS) devices beyond the 15 nm node technology. Recently, intensive research activities for achieving low interface density of states and excellent performance more

 Katherine Ziemer Writes:
Interface Studies on Functional Oxide Integration with Silicon Carbide: General Lessons and Specific Challenges
Effective integration of functional oxides (magnetic, ferroelectric, piezoelectric and other multi-functional materials) with semiconductors will lead to next-generation devices such as: new architectures that enable multiple and simultaneous more

 Manjula Nandasiri Writes:
Influence of growth-rate on the epitaxial orientation and the crystalline quality of CeO2 thin films grown on Al2O3 (0001) by Molecular Beam Epitaxy
Cerium oxide (CeO2) is one of the extensively studied rare earth oxides; however, it continues to attract attention because of its potential use in medical biology, catalysis, intermediate temperature solid oxide fuel cells (IT-SOFC), and resistive more

 Gokul Radhakrishnan Writes:
Effect of MBE Deposition Conditions on Interfacial Properties of STO/Si
Oxides on semiconductors are becoming increasing important as more functionality on conventional semiconductor devices is being sought that can potentially lead to new applications. The properties of oxides that include magnetic and ferroelectricity more

 Kuaile Zhao Writes:
ZnO grown by Plasma‐Assisted MBE under different plasma conditions
ZnO and related materials have attracted considerable attention due to their potential applications in photonic and electronic devices. ZnO has a direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at 300 K. ZnO thin films have been more

 Aaron Ptak Writes:
Bismuth Incorporation in Molecular-Beam Epitaxy-Grown GaAsBi
GaAsBi is part of a class of materials known as highly-mismatched alloys that exhibit very interesting properties. It is similar to the well-studied dilute nitride alloys, except that in the case of GaAsBi it is the valence band that is highly more

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